Name: /Tools-Info/Irf610pbf Vishay
Brand: EstiSource
Availability: InStock

IRF610PBF VISHAY

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IRF610PBF VISHAY

Introduction
Material Composition
Manufacturing Process
Challenges and Limitations
Costing
Properties and Characteristics
Frequently asked questions
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IRF610PBF Vishay N-Channel Power MOSFET

is an N-channel enhancement mode power MOSFET housed in a TO-220 package. It operates at a drain-source voltage of up to 200V with a continuous drain current rating of 3.3A. Known for its high input impedance and fast switching performance, this device is commonly used in power conversion circuits, switching regulators, audio amplifiers, and motor controllers. Its robust silicon design provides low R_DS(on) and high avalanche energy capability.

How EstiSource Helps

EstiSource supports engineering and procurement teams by ensuring verified sourcing of original IRF610PBF Vishay MOSFETs from authorized suppliers. Our platform enables real-time part availability checks, MOQ optimization, and logistics assistance for urgent design and production runs. For OEMs, we assist with custom heat dissipation modeling and design validation to reduce prototyping errors. For distributors and integrators, we ensure consistent supply with pricing transparency and predictive inventory tracking.

Why Choose EstiSource for Sourcing IRF610PBF

At EstiSource, we blend electronic component expertise with real-time sourcing intelligence. Our verified supplier network, transparent pricing model, and technical support ensure you get authentic Vishay parts quickly and efficiently. Whether for prototyping or full-scale production, EstiSource helps you avoid delays, manage cost-to-design trade-offs, and align your BOM strategy with real-world supplier constraints. Trust EstiSource for your power semiconductor sourcing—accurate, dependable, and cost-effective.

1. Material Composition

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The IRF610PBF is built using silicon (for the MOSFET die), encased in a molded epoxy compound for insulation and mechanical protection. Key materials include:

Semiconductor Die: High-efficiency silicon substrate with precise doping profiles.
Lead Frame: Copper alloy for thermal and electrical conduction.
Encapsulation: Flame-retardant epoxy resin (UL 94V-0 compliant).
Plating: Tin-plated leads for improved solderability and RoHS compliance.

2. Manufacturing Process

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Die Fabrication: Fabricated using planar technology with N-channel diffusion in a lightly doped P-type silicon wafer.
Wafer Testing: Electrical parameters like threshold voltage, leakage current, and breakdown voltage are tested.
Dicing & Die Attach: The wafer is diced into individual chips and mounted on a copper lead frame using silver epoxy.
Wire Bonding: Fine aluminum wires are bonded between die pads and lead frame terminals.
Encapsulation: The device is sealed with an epoxy mold compound in a TO-220 package.
Lead Trimming & Forming: The external leads are trimmed, shaped, and tin-plated for solder compatibility.
Final Testing & Marking: Each MOSFET undergoes parametric testing, marking with part identification, and date code labeling.

3. Challenges and Limitations

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The IRF610PBF, while popular, does have some challenges and limitations that designers should be aware of:

Thermal Dissipation

Challenge: While TO-220 provides good thermal performance, proper heatsinking is required to handle full rated current. Insufficient cooling can lead to overheating and premature failure.

Gate Sensitivity

Challenge: The high input impedance also makes it susceptible to electrostatic discharge (ESD) damage during handling and assembly. Proper ESD precautions are crucial.

Avalanche Stress

Challenge: Applications requiring repetitive avalanche events must carefully evaluate energy ratings to avoid long-term degradation or destruction of the device.

Parasitics in High-Speed Switching

Challenge: At high frequencies, parasitic capacitance and inductance within the package and PCB layout may cause voltage ringing and electromagnetic interference (EMI), requiring careful design to mitigate.

Mounting Considerations

Challenge: Improper PCB layout or insufficient copper area can lead to inefficient heat transfer from the device to the board, resulting in higher junction temperatures and potential power loss.

4. Costing

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The typical cost structure includes:

Raw Materials: Silicon die, copper lead frame, epoxy, and plating – ₹12–₹18 per unit
Wafer Fabrication & Testing: Cleanroom processing, ion implantation, and probe testing – ₹15–₹25 per unit
Packaging & Assembly: Die bonding, wire bonding, molding, and lead forming – ₹20–₹28 per unit
Final Testing & Quality Control: Electrical testing, labeling, and visual inspection – ₹8–₹12 per unit
Logistics & Packaging: Bulk or tape-and-reel packaging, export-grade boxing – ₹4–₹7 per unit

Estimated Total Unit Cost:

Prototype or Small Batch: ₹60–₹75 per unit
Bulk (>10,000 pcs): ₹42–₹55 per unit

5. Properties and Characteristics

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Drain-Source Voltage (Vds): 200V
Continuous Drain Current (Id): 3.3A @ 25°C
Gate Threshold Voltage (Vgs(th)): 2.0V to 4.0V
R_DS(on): ~1.5 ohms at Vgs = 10V
Power Dissipation: Up to 36W with heatsink
Package: TO-220
Switching Speed: <100ns rise and fall time
Temperature Range: -55°C to +150°C
RoHS Compliance: Yes

6. Frequently Asked Questions

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Q1. What is the maximum voltage and current rating for IRF610PBF?

A: The IRF610PBF can handle a drain-source voltage up to 200V and continuous drain current up to 3.3A with adequate cooling.

Q2. Can this MOSFET be used in switching regulators?

A: Yes, its fast switching capabilities and low gate charge make it ideal for low to medium-power DC-DC converters and SMPS.

Q3. Is it suitable for audio amplifier applications?

A: Absolutely. IRF610PBF is frequently used in the output stage of Class D and linear amplifiers due to its linearity and thermal performance.

Q4. How do I manage thermal performance?

A: Always mount it with a proper heatsink and thermal compound to maintain safe junction temperatures, especially in high current scenarios.

Q5. Is it ESD-sensitive?

A: Yes. Like all MOSFETs, it is sensitive to ESD. Proper precautions should be taken during handling and soldering.

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