Name: /Tools-Info/Irf7319trpbf Smd Infineon
Brand: EstiSource
Availability: InStock

IRF7319TRPBF SMD INFINEON

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IRF7319TRPBF SMD INFINEON

Introduction
Material Composition
Manufacturing Process
Challenges and Limitations
Costing
Properties and Characteristics
Frequently asked questions
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One Click Product Costing

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IRF7319TRPBF – Dual N-Channel Power MOSFET

is a dual N-channel power MOSFET from Infineon (formerly International Rectifier) packaged in an SMD format, specifically SO-8 (Small Outline-8). It integrates two low R_DS(on) MOSFETs into a single compact footprint, enabling efficient switching and load control in low-voltage systems. This makes it highly suitable for notebook power, DC-DC converters, battery management systems, and handheld electronics.

Designed with trench technology for reduced on-resistance and optimized switching performance, the IRF7319TRPBF operates at logic-level gate voltages (2.5V–10V), making it compatible with low-voltage microcontroller-based systems.

How EstiSource Helps

EstiSource supports design and sourcing teams by streamlining the acquisition of critical components like the IRF7319TRPBF. From real-time cost insights and alternate part recommendations to trusted supplier links and availability alerts, our platform ensures engineers and buyers reduce procurement time and cost, especially when dealing with high-voltage semiconductor components.

Why Choose EstiSource for IRF7319TRPBF Sourcing

EstiSource delivers more than components — we bring clarity, confidence, and control to your sourcing process. Whether you’re a manufacturer building thousands of units or a startup refining your prototype, we empower you with transparent pricing, vetted suppliers, and sourcing intelligence across geographies. Every IRF7319TRPBF you source through EstiSource comes with data-backed assurance and tailored support.

1. Material Composition

▶

The IRF7319TRPBF consists of:

Silicon Die (2 units): Two discrete N-channel MOSFETs integrated using advanced trench gate technology.
Leadframe (Copper Alloy): Forms the structural base and connects the MOSFETs to the external pins.
Mold Compound: Epoxy resin compound providing physical protection and insulation.
Bond Wires: Aluminum or gold wires for internal die-to-leadframe connections.
Finish Plating: Matte tin or NiPdAu finish for solderability and oxidation resistance.
Plastic SO-8 Package: Molded thermoset material used in surface-mount packaging with thermal and electrical insulation.

2. Manufacturing Process

▶

Wafer Fabrication: Both MOSFETs are built using high-precision trench gate processing on a shared silicon wafer.
Die Separation & Electrical Testing: The wafer is sawn into individual dual-die chips, each tested for voltage and current specs.
Die Bonding: The dual die is mounted onto a copper leadframe using epoxy adhesive or eutectic bonding.
Wire Bonding: Multiple wires connect each MOSFET to the external pins to enable dual-channel functionality.
Encapsulation: An SO-8 molded package is formed around the die to protect from moisture and mechanical stress.
Trim & Form: Leads are trimmed to final dimensions and plated for SMD soldering.
Final Testing: Includes gate threshold, breakdown voltage, leakage current, and switching performance validation.

3. Challenges & Limitations

▶

Thermal Dissipation Limits

SO-8 packages have restricted power dissipation compared to TO-220 or D2PAK alternatives.

Parasitic Inductance

Due to compact layout, parasitics may impact high-speed switching unless PCB layout is optimized.

Counterfeit Risk

Popular in low-voltage electronics, IRF series MOSFETs are often cloned with fake markings.

Current Sharing

Both MOSFETs in the package need careful layout to prevent unbalanced thermal loading.

Limited High-Voltage Use

Rated typically for low-voltage applications (20V–30V range), not suitable for HV systems.

4. Costing

▶

Unit Price (B2B Bulk): ₹9 – ₹15 per unit depending on volume and supplier region.
Small Batch / Sample Purchase: ₹18 – ₹30 per unit in low MOQ or retail packs.

Price Influencers:

Region (China import vs. India stockist)
Availability during shortage cycles
SO-8 SMD packaging and RoHS certification

Hidden Costs:

SMD reel packaging (add ₹200–₹400 per reel)
Manual soldering rework costs in prototypes
Shelf-life concerns if stored without humidity control

5. Properties & Characteristics

▶

MOSFET Type

Dual N-Channel

Drain-Source Voltage (V_DS)

30V

Continuous Drain Current (I_D)

~6A per channel

R_DS(on)

As low as 0.04Ω typical

Gate Drive Voltage

2.5V–10V logic level

Package

SO-8 (SMD)

Application Areas

Power switching, Li-Ion protection, DC-DC converters, mobile electronics

Operating Temp Range

-55°C to +150°C

Switching Speed

Fast turn-on and turn-off characteristics suitable for PWM

6. Frequently Asked Questions

▶

Q1: Can IRF7319TRPBF replace two separate MOSFETs?

Yes, it combines two N-channel MOSFETs in one package, reducing PCB space and component count.

Q2: What is its maximum drain current per channel?

Approximately 6A per MOSFET, depending on PCB thermal layout.

Q3: Is this suitable for switching inductive loads?

Yes, but it’s recommended to use flyback diodes or snubbers to suppress transients.

Q4: Can it be driven by a 3.3V microcontroller?

Absolutely. It is optimized for logic-level drive, so 3.3V gate signals are sufficient.

Q5: What are common substitutes?

Alternatives include FDMC6675BZ, IRF7324, or Vishay Si4925DY for similar pinouts and specs.

Precision in every estimate, excellence in Service.

IRF7319TRPBF SMD INFINEON

One Click Product Costing

1. Material Composition

2. Manufacturing Process

3. Challenges & Limitations

Thermal Dissipation Limits

Parasitic Inductance

Counterfeit Risk

Current Sharing

Limited High-Voltage Use

4. Costing

5. Properties & Characteristics

MOSFET Type

Drain-Source Voltage (VDS)

Continuous Drain Current (ID)

RDS(on)

Gate Drive Voltage

Package

Application Areas

Operating Temp Range

Switching Speed

6. Frequently Asked Questions

Drain-Source Voltage (V_DS)

Continuous Drain Current (I_D)

R_DS(on)