Name: /Tools-Info/Irfz44npbf Ir To220
Brand: EstiSource
Availability: InStock

IRFZ44NPBF IR TO220

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IRFZ44NPBF IR TO220

Introduction
Material Composition
Manufacturing Process
Challenges and Limitations
Costing
Properties and Characteristics
Frequently asked questions
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One Click Product Costing

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IRFZ44NPBF N-Channel Power MOSFET – TO-220

is an N-channel enhancement-mode power MOSFET designed for high-speed switching and low R_DS(on) applications. It offers a drain-source voltage (V_DS) rating of 55V, continuous drain current capacity of up to 49A, and is housed in a standard TO-220 package. Developed by International Rectifier (now part of Infineon), the IRFZ44NPBF is RoHS-compliant and widely used in automotive electronics, battery management systems, power tools, and motor control circuits.

Due to its low gate threshold voltage and high current capability, it is highly favored for use in low-voltage DC-DC converters, H-bridge motor drivers, and power distribution systems.

How EstiSource Helps

EstiSource supports design and sourcing teams by streamlining the acquisition of critical components like the IRFZ44NPBF. From real-time cost insights and alternate part recommendations to trusted supplier links and availability alerts, our platform ensures engineers and buyers reduce procurement time and cost, especially when dealing with high-voltage semiconductor components.

Why Choose EstiSource for Sourcing

At EstiSource, we empower engineers, procurement heads, and innovators with the tools to estimate, evaluate, and execute component sourcing smarter. Whether you’re scaling a production line or designing the next IoT solution, we make sure your sourcing workflow is streamlined, cost-accurate, and counterfeit-free.

1. Material Composition

▶

The IRFZ44NPBF consists of the following materials:

Silicon Die: Built with trench-gate MOSFET structure to optimize switching speed and reduce conduction losses.
Copper Leadframe: Acts as mechanical base and electrical interface for the silicon chip.
Epoxy Molding Compound: Encapsulates the die, offering protection against mechanical stress, moisture, and contamination.
Aluminum Wire Bonds: Serve as connections between die and lead terminals.
Tin-Plated Leads: For enhanced solderability and corrosion protection.
TO-220 Package Body: Thermoplastic resin filled with glass for high electrical insulation and heat tolerance.

2. Manufacturing Process

▶

Wafer Fabrication: Uses planar or trench processes to define MOSFET junctions through ion implantation and photolithography.
Die Preparation: Wafers are diced into individual dies and undergo wafer probe testing.
Die Attachment: The die is fixed onto the copper leadframe using conductive adhesive.
Wire Bonding: High-speed bonding connects gate, drain, and source pads to external leads via fine wires.
Mold Encapsulation: The assembly is molded using epoxy resin into the TO-220 form factor.
Lead Finishing: Lead legs are trimmed, plated (tin), and bent for standard through-hole compatibility.
Final Test & Packaging: Electrical and reliability testing ensures performance parameters before final packaging.

3. Challenges & Limitations

▶

Heat Dissipation Needs

Despite its high current rating, thermal performance is limited without an adequate heatsink.

EMI Concerns

Fast switching may cause EMI issues in poorly designed layouts.

Gate Protection Required

Absence of internal zener clamps makes external gate protection circuits necessary.

Clone Market Risk

Widespread popularity makes it a frequent target of counterfeit or relabeled versions in secondary markets.

Not Ideal for >60V Applications

With 55V V_DS limit, it's unsuitable for high-voltage designs beyond automotive 12–48V systems.

4. Costing

▶

Bulk B2B Rate: ₹15 to ₹22 per unit for quantities above 1,000 pcs.
B2C Market Price: ₹25–₹40 per piece for small-scale or hobbyist purchases.

Cost Drivers:

Leadframe material price fluctuations
MOQ and shipping origin (local vs imported stock)
Availability in RoHS and Pb-free packaging

Packaging Impact: Bulk tape & reel lowers cost per unit vs. tube packaging for prototypes.

Common Cost Pitfall: Unverified sources may sell sub-spec or fake parts leading to design failure and warranty issues.

5. Properties & Characteristics

▶

Drain-Source Voltage (V_DS)

55V

Continuous Drain Current (I_D)

49A at 25°C

R_DS(on)

~17 mΩ max

Gate Threshold Voltage (V_GS(th))

2.0V to 4.0V

Gate Charge (Q_g)

67nC typical

Power Dissipation (P_D)

94W

Package

TO-220AB

Mounting Type

Through Hole

Temperature Range

-55°C to +175°C

Applications

H-bridge drivers, power inverters, low-voltage switching, battery protection circuits

6. Frequently Asked Questions

▶

Q1: Is IRFZ44NPBF suitable for Arduino or Raspberry Pi projects?

Yes, with proper gate drive circuitry, it can be used in switching loads via logic-level signals.

Q2: Can it switch inductive loads like motors or solenoids?

Yes, but ensure flyback diodes or snubbers are in place to protect from voltage spikes.

Q3: What’s the difference between IRFZ44N and IRFZ44NPBF?

The NPBF version is RoHS-compliant (lead-free) and environmentally safer for manufacturing.

Q4: Can IRFZ44NPBF be replaced with a higher voltage part like IRF540N?

Yes, if the application voltage exceeds 55V, using a 100V or higher MOSFET like IRF540N is advisable.

Q5: What precautions are needed when soldering this part?

Use ESD-safe practices and avoid excessive dwell time to prevent die damage from heat soak.

Precision in every estimate, excellence in Service.

IRFZ44NPBF IR TO220

One Click Product Costing

1. Material Composition

2. Manufacturing Process

3. Challenges & Limitations

Heat Dissipation Needs

EMI Concerns

Gate Protection Required

Clone Market Risk

Not Ideal for >60V Applications

4. Costing

5. Properties & Characteristics

Drain-Source Voltage (VDS)

Continuous Drain Current (ID)

RDS(on)

Gate Threshold Voltage (VGS(th))

Gate Charge (Qg)

Power Dissipation (PD)

Package

Mounting Type

Temperature Range

Applications

6. Frequently Asked Questions

Drain-Source Voltage (V_DS)

Continuous Drain Current (I_D)

R_DS(on)

Gate Threshold Voltage (V_GS(th))

Gate Charge (Q_g)

Power Dissipation (P_D)